Plastic Medium−Power Complementary Silicon Transistors

Designed for general−purpose amplifier and low−speed switching applications.

FEATUREs
• High DC Current Gain −
   hFE = 2500 (Typ) @ IC
           = 1.0 Adc
• Collector−Emitter Sustaining Voltage − @ 30 mAdc
   VCEO(sus) = 60 Vdc (Min) − TIP110, TIP115
                      = 80 Vdc (Min) − TIP111, TIP116
                      = 100 Vdc (Min) − TIP112, TIP117
• Low Collector−Emitter Saturation Voltage −
   VCE(sat) = 2.5 Vdc (Max) @ IC
                   = 2.0 Adc
• Monolithic Construction with Built−in Base−Emitter Shunt Resistors
• Pb−Free Packages are Available*