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T1G4020036-FS Даташит - Qorvo, Inc

T1G4020036-FS image

Номер в каталоге
T1G4020036-FS

Компоненты Описание

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18 Pages

File Size
1.7 MB

производитель
QORVO
Qorvo, Inc 

Product Overview
The Qorvo T1G4020036-FS is a 2 x 200 W (P3dB) discrete GaN on SiC HEMT which operates from DC to 3.5 GHz. The device is in an industry standard air cavity package and is ideally suited for IFF, avionics, military and civilian radar, and test instrumentation. The device can support both pulsed and linear operations.
Lead-free and ROHS compliant
Evaluation boards are available upon request.


KEY FEATUREs
• Frequency: DC to 3.5 GHz
• Output Power (P3dB)1: 200 W
• Linear Gain1: 18.1 dB
• Typical PAE3dB1: 67.6%
• Operating Voltage: 50 V
• CW and Pulse capable
   Note 1: @ 2.8 GHz Load Pull (Half of device)


APPLICATIONs
• Military and civilian radar
• Professional and military radio communications
• Test instrumentation
• Wideband or narrowband amplifiers
• Jammers


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Компоненты Описание
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