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STP80N05-09
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STP80N05-09 Даташит - STMicroelectronics
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N - CHANNEL ENHANCEMENT MODE ”ULTRA HIGH DENSITY” POWER MOS TRANSISTOR
■ ULTRA HIGH DENSITY TECHNOLOGY
■ TYPICAL RDS(on)=7 mΩ
■ AVALANCHE RUGGED TECHNOLOGY
■ LOW GATE CHARGE
■ HIGH CURRENT CAPABILITY
■ 175°C OPERATING TEMPERATURE
APPLICATIONS
■ SYNCROUNOUS RECTIFIERS
■ HIGH CURRENT, HIGH SPEED SWITCHING
■ DC-DC & DC-AC CONVERTER ABSOLUTE
MAXIMUM RATINGS
Номер в каталоге
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производитель
N - CHANNEL ENHANCEMENT MODE ULTRA HIGH DENSITY POWER MOS TRANSISTOR
STMicroelectronics
N - CHANNEL ENHANCEMENT MODE ”ULTRA HIGH DENSITY” POWER MOS TRANSISTOR
STMicroelectronics
N - CHANNEL ENHANCEMENT MODE ”ULTRA HIGH DENSITY” POWER MOS TRANSISTOR
STMicroelectronics
N - CHANNEL ENHANCEMENT MODE "ULTRA HIGH DENSITY" POWER MOS TRANSISTOR
STMicroelectronics
N - CHANNEL ENHANCEMENT MODE "ULTRA HIGH DENSITY" POWER MOS TRANSISTOR
STMicroelectronics
N - CHANNEL ENHANCEMENT MODE "ULTRA HIGH DENSITY" POWER MOS TRANSISTOR
STMicroelectronics
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