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STP6NA80 Даташит - STMicroelectronics

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Номер в каталоге
STP6NA80

Компоненты Описание

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10 Pages

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201.3 kB

производитель
ST-Microelectronics
STMicroelectronics 

DESCRIPTION
This series of POWER MOSFETS represents the most advanced high voltage technology. The optimized cell layout coupled with a new proprietary edge termination concur to give the device low RDS(on)and gate charge, unequalled ruggedness and superior switching performance.

■ TYPICAL RDS(on)= 1.68Ω
■ ±30V GATE TO SOURCE VOLTAGE RATING
■ 100% AVALANCHE TESTED
■ REPETITIVE AVALANCHE DATA AT 100°C
■ LOW INTRINSIC CAPACITANCES
■ GATE GHARGE MINIMIZED
■ REDUCED THRESHOLD VOLTAGE SPREAD


APPLICATIONS
■ HIGH CURRENT, HIGH SPEED SWITCHING
■ SWITCH MODE POWER SUPPLIES (SMPS)
■ DC-AC CONVERTERS FOR WELDING EQUIPMENT AND UNINTERRUPTIBLE POWER SUPPLIES AND MOTOR DRIVE


Номер в каталоге
Компоненты Описание
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производитель
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