Номер в каталоге
STP3N150
Компоненты Описание
PDF
page
16 Pages
File Size
474.6 kB
производитель
STMicroelectronics
STP3N150 Даташит - STMicroelectronics
STMicroelectronics
Description
Using the well consolidated high voltage MESH OVERLAY™ process, STMicroelectronics has designed an advanced family of very high voltage Power MOSFETs with outstanding performances. The strengthened layout coupled with the company’s proprietary edge termination structure, gives the lowest RDS(on) per area, unrivalled gate charge and switching characteristics.
FEATUREs
■ 100% avalanche tested
■ Intrinsic capacitances and Qg minimized
■ High speed switching
■ Fully isolated TO-3PF and TO-220FH plastic
packages
■ Creepage distance path is 5.4 mm (typ.) for
TO-3PF
■ Creepage distance path is > 4 mm for
TO-220FH
APPLICATION
■ Switching applications
Номер в каталоге
Компоненты Описание
View
производитель
N-channel 1500 V - 5 Ω - 4 A - PowerMESH™ Power MOSFET TO-220 - TO-220FH - TO-247 - TO-3PF
STMicroelectronics
N-channel 1500 V, 5 Ω, 4 A, PowerMESH™ Power MOSFET in TO-220, TO-247, TO-3PF ( Rev : 2009 )
STMicroelectronics
N-channel 1200 V, 1.95 Ω typ., 6 A SuperMESH3™ Power MOSFET in TO-3PF, TO-220 and TO-247 packages
STMicroelectronics
N-channel 650 V, 0.049 Ω, 46 A MDmesh™ V Power MOSFET in TO-247, TO-3PF
STMicroelectronics
N-channel 1000 V, 2.7 Ω, 3.5 A, TO-220, TO-220FP, TO-247 SuperMESH3™ Power MOSFET
STMicroelectronics
N-channel 800 V, 0.35 Ω, 11 A MDmesh™ Power MOSFET TO-220, TO-220FP, D2PAK, TO-247 ( Rev : 2010 )
STMicroelectronics
N-channel 500 V, 0.40 Ω, 11 A TO-220, TO-220FP, TO-247 Zener-protected SuperMESHTM Power MOSFET
STMicroelectronics
N-channel Enhanced mode DFN5*6/TO-251/TO-252/TO-220 MOSFET
Xian Semipower Electronic Technology Co., Ltd.
Share Link: 