Description
This device is an ultrafast IGBT. It utilizes the advanced Power MESH™ process resulting in an excellent trade-off between switching performance and low on-state behavior.

FEATUREs
■ Low on-voltage drop (VCE(sat))
■ Very soft Ultrafast recovery anti-parallel diode

APPLICATIONs
■ High frequency motor drives
■ SMPS and PFC in both hard switch and
   resonant topologies