Description
This device is an IGBT developed using an advanced proprietary trench gate and field stop structure. This IGBT is the result of a compromise between conduction and switching losses, maximizing the efficiency of high switching frequency converters. Furthermore, a slightly positive VCE(sat) temperature coefficient and very tight parameter distribution result in easier paralleling operation.

FEATUREs
• Very high speed switching
• Tight parameters distribution
• Safe paralleling
• Low thermal resistance
• 6 µs short-circuit withstand time
• Ultrafast soft recovery antiparallel diode

APPLICATIONs
• Photovoltaic inverters
• Uninterruptible power supply
• Welding
• Power factor correction
• High switching frequency converters