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STFW1N105K3 Даташит - STMicroelectronics

1N105K3 image

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STFW1N105K3

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18 Pages

File Size
665.8 kB

производитель
ST-Microelectronics
STMicroelectronics 

Description
These SuperMESH3™ Power MOSFETs are the result of improvements applied to STMicroelectronics’ SuperMESH™ technology, combined with a new optimized vertical structure. These devices boast an extremely low on-resistance, superior dynamic performance and high avalanche capability, rendering them suitable for the most demanding applications.


FEATUREs
■ Gate charge minimized
■ Extremely large avalanche performance
■ 100% avalanche tested
■ Very low intrinsic capacitance


APPLICATIONs
■ Switching applications


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Компоненты Описание
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производитель
N-channel 1200 V, 1.95 Ω typ., 6 A SuperMESH3™ Power MOSFET in TO-3PF, TO-220 and TO-247 packages
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N-channel 650 V, 0.067 Ω typ., 35 A MDmesh™ V Power MOSFET in D2PAK, TO-220FP and TO-220 packages
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N-channel 900 V, 1.56 Ω typ., 5.8 A SuperMESH™ Power MOSFET in D2PAK, TO-220, TO-220FP and TO-247 packages
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N-channel 650 V, 0.308 Ω typ., 11 A MDmesh™ V Power MOSFET in TO-220FP, I2PAKFP and TO-220 packages
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N-channel 650 V, 0.185 Ω typ., 16 A MDmesh M2 Power MOSFET in D2PAK, TO-220FP and TO-220 packages
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N-channel 800 V, 0.19 Ω typ., 19.5 A SuperMESH™5 Power MOSFET in D2PAK, TO-220FP, TO-220 and TO-247 packages ( Rev : 2013 )
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