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STFI6N80K5
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STMicroelectronics
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STFI6N80K5 Даташит - STMicroelectronics
STMicroelectronics
Description
These very high voltage N-channel Power MOSFETs are designed using MDmesh™ K5 technology based on an innovative proprietary vertical structure. The result is a dramatic reduction in on-resistance and ultra-low gate charge for applications requiring superior power density and high efficiency.
FEATUREs
• Industry’s lowest RDS(on)
• Industry’s best figure of merit (FoM)
• Ultra low gate charge
• 100% avalanche tested
• Zener-protected
APPLICATIONs
• Switching applications
Номер в каталоге
Компоненты Описание
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производитель
N-channel 800 V, 0.95 Ω typ., 6 A MDmesh™ K5 Power MOSFETs in TO-220FP and I²PAKFP packages
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