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STF15NM65N(2016) Даташит - STMicroelectronics

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Номер в каталоге
STF15NM65N

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page
15 Pages

File Size
928.5 kB

производитель
ST-Microelectronics
STMicroelectronics 

Description
These devices are N-channel Power MOSFETs developed using the second generation of MDmesh™ technology. This revolutionary Power MOSFETs associates a vertical structure to the company’s strip layout to yield one of the world’s lowest on-resistance and gate charge. It is therefore suitable for the most demanding high efficiency converters.


FEATUREs
• 100% avalanche tested
• Low input capacitance and gate charge
• Low gate input resistance


APPLICATIONs
• Switching applications


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Компоненты Описание
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производитель
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