Description
MDmesh™ technology applies the benefits of the multiple drain process to STMicroelectronics’ well-known PowerMESH™ horizontal layout structure. The resulting product offers low on-resistance, high dv/dt capability and excellent avalanche characteristics.
FEATUREs
■ 100% avalanche tested
■ Low input capacitance and gate charge
■ Low gate input resistance
APPLICATION
■ Switching applications
Номер в каталоге
Компоненты Описание
View
производитель
N-channel 525 V, 0.95 Ω, 6 A, DPAK, TO-220FP, TO-220 SuperFREDmesh3™ Power MOSFET
STMicroelectronics
N-channel 55 V, 6.5 mΩ, 80 A, DPAK, IPAK, D2PAK, I2PAK, TO-220 TO-220FP STripFET™ III Power MOSFET
STMicroelectronics
N-channel 800 V, 3.8 Ω, 2.5 A, TO-220, TO-220FP, DPAK, IPAK Zener-protected SuperMESH™ Power MOSFET
STMicroelectronics
N-channel 600 V, 0.63 Ω, 6.5 A TO-220, TO-220FP, DPAK MDmesh™ II Power MOSFET
STMicroelectronics
N-channel 800 V, 0.95 Ω typ., 6 A MDmesh K5 Power MOSFETs in DPAK, TO-220 and IPAK packages ( Rev : 2020 )
STMicroelectronics
N-CHANNEL 600V - 0.9Ω - 8A TO-220/TO-220FP/DPAK/IPAK MDmesh™ Power MOSFET ( Rev : 2003 )
STMicroelectronics
N-channel 600 V, 0.53 Ω, 10 A, DPAK, TO-220, TO-220FP, IPAK MDmesh™ II Power MOSFET
STMicroelectronics
N-channel 650 V, 0.43 Ω, 9 A MDmesh™ II Power MOSFET TO-220, TO-220FP, IPAK, DPAK
STMicroelectronics
N-channel 600 V, 0.59 Ω , 7 A, FDmesh™ II Power MOSFET TO-220, TO-220FP, IPAK, DPAK
STMicroelectronics
N-channel 800 V, 2.8 Ω typ., 2.5 A MDmesh™ K5 Power MOSFETs in DPAK, TO-220FP, TO-220 and IPAK
STMicroelectronics