Номер в каталоге
STD15P6F6AG
Компоненты Описание
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производитель
STMicroelectronics
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STD15P6F6AG Даташит - STMicroelectronics
STMicroelectronics
Description
This device is a P-channel Power MOSFET developed using the STripFET™ F6 technology, with a new trench gate structure. The resulting Power MOSFET exhibits very low RDS(on) in all packages.
FEATUREs
• Designed for automotive applications and
AEC-Q101 qualified
• Very low on-resistance
• Very low gate charge
• High avalanche ruggedness
• Low gate drive power loss
APPLICATIONs
• Switching applications
Номер в каталоге
Компоненты Описание
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производитель
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