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STB8N65M5(2012) Даташит - STMicroelectronics

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STB8N65M5

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26 Pages

File Size
1.4 MB

производитель
ST-Microelectronics
STMicroelectronics 

Description
These devices are N-channel MDmesh™ V Power MOSFETs based on an innovative proprietary vertical process technology, which is combined with STMicroelectronics’ well-known PowerMESH™ horizontal layout structure. The resulting product has extremely low on-resistance, which is unmatched among silicon-based Power MOSFETs, making it especially suitable for applications which require superior power density and outstanding efficiency.


FEATUREs
■ Worldwide best RDS(on) * area
■ Higher VDSS rating
■ High dv/dt capability
■ Excellent switching performance
■ Easy to drive
■ 100% avalanche tested


APPLICATIONs
■ Switching applications

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