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STB6NA60T4 Даташит - STMicroelectronics

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STB6NA60T4

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STMicroelectronics 

N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR

■ TYPICAL RDS(on) = 1 Ω
■ ± 30V GATE TO SOURCE VOLTAGE RATING
■ 100% AVALANCHE TESTED
■ REPETITIVE AVALANCHE DATA AT 100oC
■ LOW INTRINSIC CAPACITANCES
■ GATE CHARGE MINIMIZED
■ REDUCED THRESHOLD VOLTAGE SPREAD
■ THROUGH-HOLE I2PAK (TO-262) POWER PACKAGE IN TUBE (SUFFIX ”-1”)
■ SURFACE-MOUNTING D2PACK (TO-263) POWER PACKAGE IN TUBE (NO SUFFIX) OR IN TAPE & REEL (SUFFIX ”T4”)


APPLICATIONS
■ HIGH CURRENT, HIGH SPEED SWITCHING
■ SWITCH MODE POWER SUPPLIES (SMPS)
■ DC-AC CONVERTERS FOR WELDING EQUIPMENT AND UNINTERRUPTIBLE POWER SUPPLIES AND MOTOR DRIVE


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производитель
N-CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR
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STMicroelectronics
N-CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR
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N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR
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STMicroelectronics
N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR ( Rev : 1996 )
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STMicroelectronics
N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR
PDF
STMicroelectronics
N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR
PDF
STMicroelectronics

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