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STB28N60M2 Даташит - STMicroelectronics

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STB28N60M2

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page
21 Pages

File Size
1.1 MB

производитель
ST-Microelectronics
STMicroelectronics 

Description
These devices are N-channel Power MOSFETs developed using MDmesh™ M2 technology. Thanks to their strip layout and improved vertical structure, these devices exhibit low on-resistance and optimized switching characteristics, rendering them suitable for the most demanding high efficiency converters.


FEATUREs
• Extremely low gate charge
• Excellent output capacitance (COSS) profile
• 100% avalanche tested
• Zener-protected


APPLICATIONs
• Switching applications
• LCC converters, resonant converters


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производитель
N-channel 600 V, 0.076 Ω typ., 34 A MDmesh™ M2 EP Power MOSFETs in D²PAK, TO-220 and TO-247 packages ( Rev : 2015 )
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