
STMicroelectronics
DESCRIPTION
The ST93CS56 and ST93CS57 are 2K bit Electrically Erasable Programmable Memory (EEPROM) fabricatedwith SGS-THOMSON’s High Endurance Single Polysilicon CMOS technology. The memory is accessed through a serial input D and output Q.
The 2K bit memory is organized as 128 x 16 bit words.The memory is accessed by a set of instructions which include Read, Write, Page Write, Write All and instructions used to set the memory protection. A Read instruction loads the address of the first word to be read into an internal address pointer.
■ 1 MILLION ERASE/WRITE CYCLES, with 40 YEARS DATA RETENTION
■ SELF-TIMED PROGRAMMING CYCLE with AUTO-ERASE
■ READY/BUSY SIGNAL DURING PROGRAMMING
■ SINGLE SUPPLY VOLTAGE
– 3V to 5.5V for the ST93CS56
– 2.5V to 5.5V for the ST93CS57
■ USER DEFINED WRITE PROTECTED AREA
■ PAGE WRITE MODE (4 WORDS)
■ SEQUENTIAL READ OPERATION
■ 5ms TYPICAL PROGRAMMING TIME
■ ST93CS56 and ST93CS57 are replaced by the M93S56