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SST2622(2002) Даташит - Secos Corporation.

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SST2622

Компоненты Описание

520mA, 50V, RDS(ON) 1.8Ω N-Channel Enhancement Mode Power Mos.FET

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Secos Corporation.

Description
The SST2622 utiltzed advance processing techniques to achieve the lowest The SOT-26 is universally used for all commercial-industrial applications. possible on-resistance, extermely efficient and cost-effectiveness device.

FEATUREs
* RoHS Compliant
* Low Gate Charge
* Surface Mount Package

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Компоненты Описание

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производитель

SST2602

6.3A, 20V, RDS(ON) 34mΩ N-Channel Enhancement Mode Power Mos.FET

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SSF1332E

0.6A, 20V,RDS(ON) 600mΩ N-Channel Enhancement Mode Power Mos.FET

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SSM2310

3A, 60V,RDS(ON) 90mΩ N-Channel Enhancement Mode Power Mos.FET

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SST2604

5.5A, 30V, RDS(ON) 45mΩ N-Channel Enhancement Mode Power Mos.FET

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SSM2308

3A, 60V,RDS(ON) 160mΩ N-Channel Enhancement Mode Power Mos.FET

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SSM2306A

5A, 30V,RDS(ON) 35mΩ N-Channel Enhancement Mode Power Mos.FET

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SST2604

5.5A, 30V, RDS(ON) 45mΩ N-Channel Enhancement Mode Power Mos.FET ( Rev : 2002 )

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STT3458N

3.4A , 60V , RDS(ON) 92 mΩ N-Channel Enhancement Mode Mos.FET

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SST2605

-4.0A, -30V, RDS(ON) 80mΩ P-Channel Enhancement Mode Power Mos.FET ( Rev : 2002 )

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Secos Corporation.

SMG2309

-3.7A, -30V,RDS(ON) 75mΩ P-Channel Enhancement Mode Power Mos.FET

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Secos Corporation.

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