SSM6P49NU Даташит - Toshiba
Номер в каталоге
SSM6P49NU
производитель

Toshiba
Features
(1) 1.8 V drive
(2) Low drain-source on-resistance
: RDS(ON) = 157 mΩ (max) (@VGS = -1.8 V)
RDS(ON) = 76 mΩ (max) (@VGS = -2.5 V)
RDS(ON) = 56 mΩ (max) (@VGS = -4.5 V)
RDS(ON) = 45 mΩ (max) (@VGS = -10 V)
APPLICATIONs
• Power Management Switches
Номер в каталоге
Компоненты Описание
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производитель
MOSFETs Silicon P-Channel MOS ( Rev : 2021 )
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MOSFETs Silicon P-Channel MOS
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MOSFETs Silicon P-Channel MOS ( Rev : 2021 )
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MOSFETs Silicon P-Channel MOS
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MOSFETs Silicon P-Channel MOS
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Unspecified