SSM3J304T Даташит - Toshiba
Номер в каталоге
SSM3J304T
производитель
Toshiba
○ Power Management Switch Applications
○ High-Speed Switching Applications
• 1.8-V drive
• Low ON-resistance: RDS(ON) = 297 mΩ (max) (@VGS = -1.8 V)
RDS(ON) = 168 mΩ (max) (@VGS = -2.5 V)
RDS(ON) = 127 mΩ (max) (@VGS = -4.0 V)
Номер в каталоге
Компоненты Описание
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производитель
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TOSHIBA Field Effect Transistor Silicon P-Channel MOS Type ( Rev : 2007 )
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TOSHIBA Field Effect Transistor Silicon P-Channel MOS Type
Toshiba
TOSHIBA Field Effect Transistor Silicon P Channel MOS Type
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TOSHIBA Field Effect Transistor Silicon P Channel MOS Type ( Rev : 2007 )
Toshiba
TOSHIBA Field Effect Transistor Silicon P Channel MOS Type
Toshiba
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Toshiba
