DESCRIPTION
   The SPN9926 is the Dual N-Channel logic enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology.

FEATURES
✦ 20V/5.0A,RDS(ON)=50mΩ@VGS=4.5V
✦ 20V/4.0A,RDS(ON)=65mΩ@VGS=2.5V
✦ 20V/2.8A,RDS(ON)=90mΩ@VGS=1.8V
✦ Super high density cell design for extremely low
   RDS (ON)
✦ Exceptional on-resistance and maximum DC
   current capability
✦ SOP – 8P package design

APPLICATIONS
● Power Management in Note book
● Portable Equipment
● Battery Powered System
● DC/DC Converter
● Load Switch
● DSC
● LCD Display inverter