Features
• Un-mounted monolithic linear array
• High-efficiency MOVPE-grown quantum-well structure
• Highly reliable strained-layer InGa(Al)As/GaAs material
• Standard wavelength selection is ± 3 nm
• Other pulse wavelengths are available upon request
• Solderable p- and n-side metallization
• 940nm/980nm Al-free active region

APPLICATIONs
• Recommended for CW - applications with active liquid cooling
• Pumping solid-state lasers
• Direct material processing
• Heating, illumination
• Medical applications
• Printing applications