N–CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS

StarMOS is a new generation of high voltage N–Channel enhancement mode power MOSFETs. This new technology minimises the JFET effect, increases packing density and reduces the on-resistance. StarMOS also achieves faster switching speeds through optimised gate layout.

   VDSS 1000V
   ID(cont) 13A
   RDS(on) 0.860Ω

• Faster Switching
• Lower Leakage
• 100% Avalanche Tested
• Popular TO–247 Package