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SI4483EDY_RC
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Vishay Semiconductors
DESCRIPTION
The parametric values in the R-C thermal model have been derived using curve-fitting techniques. These techniques are described in "A Simple Method of Generating Thermal Models for a Power MOSFET"[1]. When implemented in P-Spice, these values have matching characteristic curves to the Single Pulse Transient Thermal Impedance curves for the MOSFET.
R-C values for the electrical circuit in the Foster/Tank and Cauer/Filter configurations are included.