FEATURES
• TrenchFET® power MOSFETs
• High-side switching
• Ease in driving switches
• Low offset (error) voltage
• Low-voltage operation
• High-speed circuits
• Typical ESD protection:
   n-channel 900 V, p-channel 900 V (HBM)
• 100 % Rg tested
• Material categorization: for definitions of compliance
   please see www.vishay.com/doc?99912

APPLICATIONS
• Load switch, small signal switches and level-shift
   switches
   - Battery operated systems
   - Portable