Product Description
Stanford Microdevices’ SHF-0189 series is a high performance GaAs Heterostructure FET housed in a low-cost surface-mount plastic package. HFET technology improves breakdown voltage while minimizing Schottky leakage current for higher power added efficiency and improved linearity.

FEATUREs
• Patented GaAs Heterostructure FET Technology
• +27 dBm Output Power at 1dB Compression
• +39 dBm Output IP3
• High Drain Efficiency: Up to 46% at Class AB
• 15 dB Gain at 900 MHz (Application circuit)
• 17 dB Gain at 1900 MHz (Application circuit)

APPLICATIONs
• Analog and Digital Wireless System
• Cellular PCS, CDPD, Wireless Data, Pagers Product