Номер в каталоге
SFS1829
Компоненты Описание
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производитель
Solid State Devices, Inc.
SFS1829 Даташит - Solid State Devices, Inc.
Solid State Devices, Inc.
FEATURES:
• Low-Level Gate Characteristics
• IGT = 200 µA (Max) @ 25°C
• Low Holding Current IH = 1 mA (Max) @ 25°C
• Anode Common to Case
• Hermetically Sealed
• TX, TXV, S-Level Screening Available. Consult Factory
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