FEATURES:
• Rugged construction with poly silicon gate
• Low RDS(on) and high transconductance
• Excellent high temperature stability
• Very fast switching speed
• Fast recovery and superior dv/dt performance
• Increased reverse energy capability
• Low input and transfer capacitance for easy paralleling
• Hermetically sealed
• TX, TXV and Space Level Screening available
• Replaces: IRF9140 Types