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RGP30K Даташит - New Jersey Semiconductor

RGP30M image

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RGP30K

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page
1 Pages

File Size
63.5 kB

производитель
NJSEMI
New Jersey Semiconductor 

Features
• High temperature metallurgically bonded construction
• Glass passivated cavity-free junction
• 3.0 amperes operation at TA=55°C and with no thermal runaway.
• Typical IR less than 0.2uA
• Fast switching for high efficiency

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