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RF5110G(2015) Даташит - RF Micro Devices

RF5110G image

Номер в каталоге
RF5110G

Компоненты Описание

Other PDF
  2006   lastest PDF  

PDF
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page
24 Pages

File Size
2 MB

производитель
RFMD
RF Micro Devices 

Product Description
The RF5110G is a high-power, high-gain, high-efficiency power amplifier. The device is manufactured on an advanced GaAs HBT process, and has been designed for use as the final RF amplifier in GSM hand-held equipment in the 900MHz band, and general purpose radio applications in standard sub-bands from 150MHz to 960MHz. On-board power control provides over 70dB of control range with an analog voltage input, and allows for power down with a logic "low" in standby operation. The device is self-contained with 50 input and the output can be easily matched to obtain optimum power and efficiency characteristics.


FEATUREs
◾ General Purpose:
   Single 2.8V to 3.6V Supply
   32dBm Output Power
   53% Efficiency
   150MHz to 960MHz Operation
◾ GSM:
   Single 2.7V to 4.8V Supply
   +36dBm Output Power at 3.5V
   32dB Gain with Analog Gain Control
   57% Efficiency
   800MHz to 950MHz Operation
   Supports GSM and E-GSM


APPLICATIONs
◾ FM Radio Applications:
   150MHz/220MHz/450MHz
   865MHz to 928MHz
◾ 3V GSM Cellular Handsets
◾ GPRS Compatible


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