Номер в каталоге
RD02MUS1B
Компоненты Описание
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File Size
181.9 kB
производитель
Quanzhou Jinmei Electronic
RD02MUS1B Даташит - Quanzhou Jinmei Electronic
Quanzhou Jinmei Electronic
DESCRIPTION
RD02MUS1B is a MOS FET type transistor specifically designed for VHF/UHF RF power amplifiers applications.
RD02MUS1B improved a drain surge than RD02MUS1 by optimizing MOSFET structure.
FEATURES
High power gain:
Pout>2W, Gp>16dB
@Vdd=7.2V,f=175MHz, 520MHz
High Efficiency: 65%typ. (175MHz)
High Efficiency: 65%typ. (520MHz)
APPLICATION
For output stage of high power amplifiers
In VHF/UHF band mobile radio sets.
Номер в каталоге
Компоненты Описание
View
производитель
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RoHS Compliance,Silicon MOSFET Power Transistor 175MHz,520MHz,2W ( Rev : 2006 )
MITSUBISHI ELECTRIC
RoHS Compliance,Silicon MOSFET Power Transistor 175MHz,520MHz,2W
Quanzhou Jinmei Electronic
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