General Description
   The Micron Parallel NOR Flash memory is the latest generation of Flash memory devices. Benefits include more density in less space, high-speed interface device, and support for code and data storage. Features include high-performance synchronous-burst read mode, fast asynchronous access times, low power, flexible security options, and three industry-standard package choices. The product family is manufactured using Micron 65nm process technology.

   The NOR Flash device provides high performance at low voltage on a 16-bit data bus. Individually erasable memory blocks are sized for optimum code and data storage.

   Upon initial power up or return from reset, the device defaults to asynchronous pagemode read. Configuring the read configuration register enables synchronous burstmode reads. In synchronous burst mode, output data is synchronized with a user-supplied clock signal. A WAIT signal provides easy CPU-to-flash memory synchronization.

   In addition to the enhanced architecture and interface, the device incorporates technology that enables fast factory PROGRAM and ERASE operations. Designed for low-voltage systems, the devIce supports READ operations with VCC at the low voltages, and ERASE and PROGRAM operations with VPP at the low voltages or VPPH. Buffered enhanced factory programming (BEFP) provides the fastest Flash array programming performance with VPP at VPPH, which increases factory throughput. With V PP at low voltages, VCC and VPP can be tied together for a simple, ultra low-power design. In addition to voltage flexibility, a dedicated VPP connection provides complete data protection when VPP ≤ VPPLK.