Description
The 20141 is a class AB, NPN, common emitter RF power transistor intended for 23 Vdc operation from 1.465 to 1.513 GHz. Rated at 18 watts minimum output power, it may be used for both CW and PEP applications. Ion implantation, nitride surface passivation and gold metallization are used to ensure excellent device reliability. 100% lot traceability is standard.

• 18 Watts, 1.465–1.513 GHz
• Class AB Characteristics
• 45% Min Collector Efficiency at 9 Watts
• Gold Metallization
• Silicon Nitride Passivated