General description
   N-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.

FEATUREs and benefits
• Low threshold voltage
• Extended temperature range Tj = 175 °C
• Trench MOSFET technology
• Very fast switching
• ElectroStatic Discharge (ESD) protection > 1 kV HBM (Class H1C)
• AEC-Q101 qualified

APPLICATIONs
• DC to DC conversion
• High-speed line driver
• Low-side load switch
• Switching circuits