General description
   P-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.

FEATUREs and benefits
• Logic level compatible
• Very fast switching
• Trench MOSFET technology
• ElectroStatic Discharge (ESD) protection > 2 kV HBM
• AEC-Q101 qualified

APPLICATIONs
• Relay driver
• High-speed line driver
• High-side loadswitch
• Switching circuits