General description
Small-signal P-channel enhancement mode Field-Effect Transistor (FET) using Trench MOSFET technology and ultra low VF Maximum Efficiency General Application (MEGA) Schottky diode combined in a small and leadless ultra thin DFN2020-6 (SOT1118) Surface-Mounted Device (SMD) plastic package.

FEATUREs and benefits
◾ Trench MOSFET technology
◾ Integrated ultra low VF MEGA Schottky diode
◾ 1 kV ElectroStatic Discharge (ESD) protection
◾ Small and leadless ultra thin SMD plastic package: 2 × 2 × 0.65 mm
◾ Exposed drain pad for excellent thermal conduction

APPLICATIONs
◾ Charging switch for portable devices
◾ DC-to-DC converters
◾ Power management in battery-driven portables
◾ Hard disk and computing power management