
MITSUBISHI ELECTRIC
FEATURE
a) Adopting new 4th generation planar IGBT chip, which performance is improved by 1µm fine rule process. For example, typical VCE(sat)=1.7V
b) Using new Diode which is designed to get soft reverse recovery characteristics.
c) Keeping the package compatibility.
The layout/position of both terminal pin and mounting hole is same as S-series 3rd generation IPM.
• 3φ 100A, 600V Current-sense IGBT for 15kHz switching
• Monolithic gate drive & protection logic
• Detection, protection & status indication circuits for overcurrent, short-circuit, over-temperature & under-voltage(P-Fo available from upper leg devices)
• Acoustic noise-less 11kW class inverter application
• UL Recognized Yellow Card No.E80276(N) File No.E80271
APPLICATION
General purpose inverter, servo drives and other motor controls