PHPT61003NY(2020) Даташит - Nexperia B.V. All rights reserved
Номер в каталоге
PHPT61003NY
производитель

Nexperia B.V. All rights reserved
General description
NPN high power bipolar transistor in a SOT669 (LFPAK56) Surface-Mounted Device (SMD) power plastic package.
PNP complement: PHPT61003PY
FEATUREs and benefits
• High thermal power dissipation capability
• Suitable for high temperature applications up to 175 °C
• Reduced Printed-Circuit Board (PCB) requirements comparing to transistors in DPAK
• High energy efficiency due to less heat generation
• AEC-Q101 qualified
APPLICATIONs
• Power management
• Loadswitch
• Linear mode voltage regulator
• Backlighting applications
Номер в каталоге
Компоненты Описание
View
производитель
100 V, 3 A NPN high power bipolar transistor
Nexperia B.V. All rights reserved
100 V, 3 A NPN high power bipolar transistor
Nexperia B.V. All rights reserved
100 V, 3 A PNP high power bipolar transistor
Nexperia B.V. All rights reserved
100 V, 2 A NPN high power bipolar transistor
Nexperia B.V. All rights reserved
100 V, 6 A NPN high power bipolar transistor
Nexperia B.V. All rights reserved
100 V, 6 A NPN high power bipolar transistor
Nexperia B.V. All rights reserved
100 V, 2 A PNP high power bipolar transistor
Nexperia B.V. All rights reserved
100 V, 6 A PNP high power bipolar transistor
Nexperia B.V. All rights reserved
100 V, 6 A PNP high power bipolar transistor
Nexperia B.V. All rights reserved
100 V, 2 A PNP high power bipolar transistor
Nexperia B.V. All rights reserved