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PHPT61003NY(2020) Даташит - Nexperia B.V. All rights reserved

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PHPT61003NY

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14 Pages

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273.2 kB

производитель
NEXPERIA
Nexperia B.V. All rights reserved 

General description
NPN high power bipolar transistor in a SOT669 (LFPAK56) Surface-Mounted Device (SMD) power plastic package.

PNP complement: PHPT61003PY


FEATUREs and benefits
• High thermal power dissipation capability
• Suitable for high temperature applications up to 175 °C
• Reduced Printed-Circuit Board (PCB) requirements comparing to transistors in DPAK
• High energy efficiency due to less heat generation
• AEC-Q101 qualified


APPLICATIONs
• Power management
• Loadswitch
• Linear mode voltage regulator
• Backlighting applications


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