PD57002-E(2006) Даташит - STMicroelectronics
Номер в каталоге
PD57002-E
производитель

STMicroelectronics
Description
The PD57002 is a common source N-Channel, enhancement-mode lateral Field-Effect RF power transistor designed for broadband commercial and industrial applications at frequencies up to 1GHz. The PD57002 is designed for high gain and broadband performance operating in common source mode at 28 V. It is ideal for digital cellular BTS applications requiring high linearity.
General features
■ Excellent thermal stability
■ Common source configuration
■ POUT = 2W with 15dB gain @ 960MHz / 28V
■ New RF plastic package
Page Link's:
1
2
3
4
5
6
7
8
9
10
More Pages
Номер в каталоге
Компоненты Описание
View
производитель
RF power transistor, LdmoST plastic family N-channel enhancement-mode lateral MOSFETs ( Rev : 2007 )
STMicroelectronics
RF power transistor, LdmoST plastic family N-channel enhancement-mode lateral MOSFETs ( Rev : 2007 )
STMicroelectronics
RF power transistor, LdmoST plastic family N-channel enhancement-mode lateral MOSFETs ( Rev : 2008 )
STMicroelectronics
RF POWER transistor, LdmoST plastic family N-channel enhancement-mode, lateral MOSFETs ( Rev : 2010 )
STMicroelectronics
RF power transistor, LdmoST plastic family N-channel enhancement-mode lateral MOSFETs
STMicroelectronics
RF power transistor, LdmoST plastic family N-channel enhancement-mode lateral MOSFETs ( Rev : 2011 )
STMicroelectronics
RF POWER transistor, LdmoST plastic family N-channel enhancement-mode, lateral MOSFETs ( Rev : 2010_05 )
STMicroelectronics
RF POWER transistor, LDMOST plastic family N-Channel enhancement-mode lateral MOSFETs
STMicroelectronics
RF POWER transistor, LDMOST plastic family N-Channel enhancement-mode lateral MOSFETs ( Rev : 2006 )
STMicroelectronics
RF power transistor, LdmoST plastic family N-channel enhancement-mode, lateral MOSFETs ( Rev : 2012 )
STMicroelectronics