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PBHV9050T,235 Даташит - NXP Semiconductors.

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PBHV9050T,235

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12 Pages

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74.9 kB

производитель
NXP
NXP Semiconductors. 

General description
PNP high-voltage low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT23 (TO-236AB) small Surface-Mounted Device (SMD) plastic package.
NPN complement: PMBTA45
   
Features
■ High voltage
■ Low collector-emitter saturation voltage VCEsat
■ High collector current capability IC and ICM
■ High collector current gain (hFE) at high IC
■ AEC-Q101 qualified
   
Applications
■ Electronic ballasts
■ LED driver for LED chain module
■ LCD backlighting
■ Automotive motor management
■ Flyback converters
■ Hook switch for wired telecom
■ Switch Mode Power Supply (SMPS)
   

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