Description:
Each device in this series is a gallium aluminum arsenide (GaAIAs) infrared emitting diode, mounted in a hermetic metal TO-46 housing. The gallium aluminum arsenide feature provides a higher radiated output than gallium arsenide at the same forward current.
Each OP231, OP232, OP233, OP234 and OP235 device is lensed to provide a narrow beam angle (18°) between half power points. The 890 nm wavelength closely matches the spectral response of silicon phototransistors, while the narrow beam angle – combined with the specified radiant intensity of the OP231 series – facilitates easy design in beam interrupt applications in conjunction with the OP800 or OP598 series photosensors. The OP231 series is mechanically and spectrally matched to OP800, OP593 and OP598 phototransistors.

FEATUREs:
• Focused and non-focused optical light pattern
• Enhanced temperature range
• TO-46 hermetically sealed package
• Mechanically and spectrally matched to other OPTEK devices
• Choice of power ranges
• Choice of narrow or wide irradiance pattern

APPLICATIONs:
• Non-contact reflective object sensor
• Assembly line automation
• Machine automation
• Machine safety
• End of travel sensor
• Door sensor