DescripƟon:
Each device in this series is a gallium aluminum arsenide (GaAIAs) infrared emiƫng diode, mounted in a hermeƟc metal TO‐ 46 housing. The gallium aluminum arsenide feature provides a higher radiated output than gallium arsenide at the same forward current.
Each OP231, OP232, OP233, OP234 and OP235 device is lensed to provide a narrow beam angle (18°) between half power points. The 890 nm wavelength closely matches the spectral response of silicon phototransistors, while the narrow beam angle – combined with the specified radiant intensity of the OP231 series – facilitates easy design in beam interrupt applicaƟons in conjuncƟon with the OP800 or OP598 series photosensors. The OP231 series is mechanically and spectrally matched to OP800, OP593 and OP598 phototransistors.
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Features:
• Focused and non‐focused opƟcal light paƩern
• Enhanced temperature range
• TO‐46 hermeƟcally sealed package
• Mechanically and spectrally matched to other Optek devices
• Choice of power ranges
• Choice of narrow or wide irradiance paƩern

ApplicaƟons:
• Non‐contact reflecƟve object sensor
• Assembly line automaƟon
• Machine automaƟon
• Machine safety
• End of travel sensor
• Door sensor