Номер в каталоге
NX5312
Компоненты Описание
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производитель
California Eastern Laboratories.
NX5312(V2) Даташит - California Eastern Laboratories.
California Eastern Laboratories.
DESCRIPTION
NECs NX5312 Series is a 1310 nm Multiple Quantum Well (MQW) structured Fabry-Perot (FP) laser diode with InGaAs monitor PIN-PD. These devices are designed for application up to 1.25 Gb/s.
FEATURES
• OPTICAL OUTPUT POWER:
Po = 5.0 mW
• LOW THRESHOLD CURRENT :
Ith = 6 mA
• DIFFERENTIAL EFFICIENCY:
ηd =0.45 W/A
• WIDE OPERATING TEMPERATURE RANGE:
TC = -40 to +85°C
• InGaAs MONITOR PIN-PD
• CAN PACKAGE:
ø5.6 mm
• FOCAL POINT:
0.35 mm
APPLICATIONS
• STM-1 (L-1.1), STM-4 (S-4.1), ITU-T recommendations
• FTTH (Fiber To The Home) system
Номер в каталоге
Компоненты Описание
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производитель
NEC's 1310 nm InGaAsP MQW-FP LASER DIODE IN CAN PACKAGE FOR 155 Mb/s, 622 Mb/s AND 1.25 Gb/s APPLICATIONS
NEC => Renesas Technology
NEC's 1310 nm InGaAsP MQW-FP LASER DIODE IN CAN PACKAGE FOR 155 Mb/s, 622 Mb/s AND 1.25 Gb/s APPLICATIONS
California Eastern Laboratories.
NECʼs 1310 nm InGaAsP MQW FP LASER DIODE IN CAN PACKAGE FOR 155 Mb/s, 622 Mb/s, 1.25 Gb/s AND FTTH APPLICATIONS
California Eastern Laboratories.
NEC’s 1310 nm InGaAsP MQW FP LASER DIODE IN CAN PACKAGE FOR 155 Mb/s and 622 Mb/s APPLICATIONS
California Eastern Laboratories.
1 310 nm FOR 156 Mb/s, 622 Mb/s, 1.25 Gb/s, InGaAsP MQW-FP LASER DIODE
California Eastern Laboratories.
1 310 nm FOR 156 Mb/s, 622 Mb/s, 1.25 Gb/s, InGaAsP MQW-FP LASER DIODE
NEC => Renesas Technology
NEC's 1310 nm InGaAsP MQW FP LASER DIODE IN COAXIAL PACKAGE FOR 155 Mb/s AND 622 Mb/s APPLICATIONS
California Eastern Laboratories.
NEC's 1310 nm InGaAsP MQW DFB LASER DIODE IN CAN PACKAGE FOR 155 Mb/s and 622 Mb/s APPLICATIONS
California Eastern Laboratories.
NEC's 1310 nm InGaAsP MQW DFB LASER DIODE IN CAN PACKAGE FOR 155 Mb/s AND 622 Mb/s APPLICATIONS
California Eastern Laboratories.
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