Номер в каталоге
NTHD4N02FT1G
Компоненты Описание
Other PDF
PDF
page
6 Pages
File Size
65.1 kB
производитель

ON Semiconductor
Power MOSFET and Schottky Diode
20 V, 3.9 A, N−Channel, with 3.7 A
Schottky Barrier Diode, ChipFET
FEATUREs
• Leadless SMD Package Featuring a MOSFET and Schottky Diode
• 40% Smaller than TSOP−6 Package with Better Thermals
• Super Low Gate Charge MOSFET
• Ultra Low VF Schottky
• Pb−Free Package is Available
APPLICATIONs
• Fast Switching, low Gate Charge for Dc to Dc Buck and Boost
Converters
• Li−Ion Battery Applications in Cell Phones, PDAs, DSCs, and Media
Players
• Load Side Switching