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NTHD4N02FT1

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  2004  

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8 Pages

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141.4 kB

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ONSEMI
ON Semiconductor 

Power MOSFET and Schottky Diode

20 V, 3.9 A, N−Channel, with 3.7 A
Schottky Barrier Diode, ChipFET


FEATUREs
• Leadless SMD Package Featuring a MOSFET and Schottky Diode
• 40% Smaller than TSOP−6 Package with Better Thermals
• Super Low Gate Charge MOSFET
• Ultra Low VF Schottky
• Pb−Free Package is Available


APPLICATIONs
• Fast Switching, low Gate Charge for DC−to−DC Buck and Boost
   Converters
• Li−Ion Battery Applications in Cell Phones, PDAs, DSCs,
   and Media Players
• Load Side Switching


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Компоненты Описание
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производитель
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