Description:
The NTE6404 is a silicon planar, monolithic integrated circuit having thyristor electrical characteristics closely approximating those of an “ideal” four layer diode. The device is designed to switch at 8 volts with a 0.02%/°C temperature coefficient. A gate lead is provided to eliminate rate effect, obtain triggering at lower values and to obtain transient free wave forms. Silicon Unilateral Switches are specifically designed and characterized for use in monostable and bistable applications where low cost is of prime importance.

APPLICATIONs:
SCR Triggers
Frequency Dividers
Ring Counters
Cross Point Switching
Over–Voltage Sensors

Absolute Maximum Ratings:
Power Dissipation (Note 1) . . . . . . . . . . . . . . . .  . . . . . . . . .300mW
Peak Reverse Voltage . . . . . . . . . . . . . . . . . . . .. . . . . . . . . . . .–30V
DC Forward Anode Current (Note 1) . . . . . . . . . . . . .. . . . .175mA
DC Gate Current (Note 1, Note 2) . . . . . . . . . . . . . .  . . . . . . .5mA
Peak Recurrent Forward Current (1% duty cycle, 10µs pulse width, TA = +100°C) . . . .1A
Peak Non–Recurrent Forward Current (10µs pulse width, TA = +25°C) . . . . . . . . . . . . .5A
Operating Junction Temperature Range  . . . . . . . . . . . . . . . . . . . .  -55°C to +125°C
Storage Temperature Range  . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -65°C to +150°C

Note 1. Derate linearly to zero at 125°C
Note 2. This rating applicable only in OFF state. Maximum gate current in conducting state limited by maximum power rating.