NTE Electronics NTE357 Даташит, NTE357 PDF, даташитов

HOME >>> NTE Electronics >>> NTE357 PDF

NTE357 Даташит - NTE Electronics

Номер в каталоге

NTE357

Компоненты Описание

Silicon NPN Transistor RF Power Output PO = 7W @ 175MHz

Other PDF

no available.

PDF

DOWNLOAD

page

2 Pages

File Size

68 kB

производитель

NTE Electronics

Description:
The NTE357 RF power transistor is designed primarily for wideband large−signal amplifier stages in the 125−175MHz frequency range.

FEATUREs:
● Specified 28V, 175MHz Characteristics −
    Output Power = 7.0 Watts
    Minimum Gain = 8.4dB
    Efficiency = 60%
● Characterized from 125 to 175MHz
● Includes Series Equivalent Impedances

Page Link's: 1 2

Номер в каталоге

Компоненты Описание

View

производитель

NTE16003

Silicon NPN Transistor RF Power Output, PO = 7W, 175MHz

PDF

NTE Electronics

NTE1106

Silicon NPN Transistor RF Power Output PO = 3W @ 175MHz

PDF

NTE Electronics

NTE1056

Silicon NPN Transistor RF Power Output PO = 3W @ 175MHz

PDF

NTE Electronics

NTE353

Silicon NPN Transistor RF Power Output PO = 4W @ 175MHz

PDF

NTE Electronics

NTE344

Silicon NPN Transistor RF Power Output PO = 30W @ 175MHz

PDF

NTE Electronics

NTE343

Silicon NPN Transistor RF Power Output (PO = 14W, 175MHz)

PDF

NTE Electronics

NTE360

Silicon NPN Transistor RF Power Output PO = 40W @ 175MHz

PDF

NTE Electronics

NTE342

Silicon NPN Transistor RF Power Output (PO = 6W, 175MHz)

PDF

NTE Electronics

NTE16002

Silicon NPN Transistor RF Power Output, PO = 13.5W, 175MHz

PDF

NTE Electronics

NTE478

Silicon NPN Transistor RF Power Output, PO = 100W @ 175MHz

PDF

NTE Electronics

Share Link: