NTE342 Даташит - NTE Electronics
производитель

NTE Electronics
Description:
The NTE342 is a silicon NPN epitaxial planer type transistor designed for RF power amplifiers on VHF band mobile radio applications.
FEATUREs:
● High Power Gain: Gpe ≥ 10dB (VCC = 13.5V, PO = 6W, f = 175MHz)
● Ability to Withstand more than 20:1 VSWR Load when Operated at: VCC = 15.2V, PO = 6W, f = 175MHz
Номер в каталоге
Компоненты Описание
View
производитель
Silicon NPN Transistor RF Power Output PO = 3W @ 175MHz
NTE Electronics
Silicon NPN Transistor RF Power Output PO = 3W @ 175MHz
NTE Electronics
Silicon NPN Transistor RF Power Output PO = 7W @ 175MHz
NTE Electronics
Silicon NPN Transistor RF Power Output PO = 4W @ 175MHz
NTE Electronics
Silicon NPN Transistor RF Power Output PO = 30W @ 175MHz
NTE Electronics
Silicon NPN Transistor RF Power Output (PO = 14W, 175MHz)
NTE Electronics
Silicon NPN Transistor RF Power Output PO = 40W @ 175MHz
NTE Electronics
Silicon NPN Transistor RF Power Output, PO = 7W, 175MHz
NTE Electronics
Silicon NPN Transistor RF Power Output, PO = 13.5W, 175MHz
NTE Electronics
Silicon NPN Transistor RF Power Output, PO = 100W @ 175MHz
NTE Electronics