NTE2974 Даташит - NTE Electronics
производитель
NTE Electronics
Features:
● Low On–State Resistance: RDS(on) = 1.1Ω Max (VGS = 10V, ID = 3A)
● Low Input Capacitance: Ciss = 1150pF Typ
● High Avalanche Capability Ratings
● Isolated TO220 Type Package
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производитель
MOSFET N–Channel, Enhancement Mode High Speed Switch
NTE Electronics
MOSFET N–Channel, Enhancement Mode High Speed Switch
NTE Electronics
MOSFET N–Channel, Enhancement Mode High Speed Switch
NTE Electronics
MOSFET N–Channel, Enhancement Mode High Speed Switch
NTE Electronics
MOSFET N–Channel, Enhancement Mode High Speed Switch
NTE Electronics
MOSFET N–Channel, Enhancement Mode High Speed Switch
NTE Electronics
MOSFET N–Channel, Enhancement Mode High Speed Switch
NTE Electronics
MOSFET N–Channel Enhancement Mode, High Speed Switch
NTE Electronics
MOSFET N-Channel, Enhancement Mode High Speed Switch
NTE Electronics
MOSFET N−Channel, Enhancement Mode High Speed Switch
NTE Electronics
