Description:
The NTE102 (PNP) and NTE103 (NPN) are Germanium complementary transistors designed for medium–speed saturated switching applications.

FEATUREs:
● Low Collector–Emitter Saturation Voltage: VCE(sat) = 200mV Max @ IC = 24mA
● High Emitter–Base Breakdown Voltage: V(BR)EBO = 12V Min @ IE = 20µA