DESCRIPTION
The NP36P06KDG is P-channel MOS Field Effect Transistor designed for high current switching applications.

FEATURES
• Super low on-state resistance
   RDS(on)1 = 29.5 mΩ MAX. (VGS = −10 V, ID = −18 A)
   RDS(on)2 = 37.5 mΩ MAX. (VGS = −4.5 V, ID = −18 A)
• Low input capacitance
   Ciss = 3100 pF TYP.